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NVHL110N65S3F

Part No NVHL110N65S3F
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 30A TO247-3 / N-Channel 650 V 30A (Tc) 240W (Tc) Through Hole TO-247-3
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2560 pF @ 400 V
Power Dissipation (Max) 240W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number NVHL110
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number NVHL110N65S3FOS,NVHL110N65S3F-ND
Standard Package 30
Win Source Part Number 1324713-NVHL110N65S3F
Ultra Librarian 3D Model Ultra Librarian NVHL110N65S3F CAD Model

Description

ON Semiconductor NVHL110N65S3F N-Channel MOSFET

The ON Semiconductor NVHL110N65S3F is a high-performance N-Channel MOSFET that is designed to meet the rigorous demands of power conversion and switching applications. This device is part of ON Semiconductor's NVHL series, which is renowned for its high efficiency and reliability. The NVHL110N65S3F offers a 650V drain-to-source breakdown voltage (V<sub>DS), making it suitable for high-voltage operations.

With a continuous drain current (I<sub>D) of 110A at 25°C, this MOSFET can handle significant power without overheating, thanks to its low on-resistance of 65 mΩ. This characteristic ensures minimal power loss and makes the NVHL110N65S3F an excellent choice for energy-sensitive applications. Additionally, the device features a low total gate charge (Q<sub>G) that enhances its switching performance, making it ideal for high-frequency circuits.

The NVHL110N65S3F comes in a robust TO-247 package, which provides excellent thermal performance and is suitable for through-hole mounting. This packaging, combined with the MOSFET's maximum junction temperature of 150°C, allows for reliable operation even in environments with high thermal challenges.

One of the key benefits of the NVHL110N65S3F is its avalanche energy rating (E<sub>AS), which ensures safe operation under extreme conditions, such as unexpected voltage spikes. This makes the MOSFET a safe choice for power supplies, motor drives, and other applications that may experience unpredictable voltage transients.

The device also features a fast intrinsic diode with a low reverse recovery time (t<sub>rr), which is critical for reducing noise and improving efficiency in fast-switching applications. This characteristic, along with the device's overall ruggedness, contributes to the NVHL110N65S3F's suitability for hard-switching applications.

In summary, the ON Semiconductor NVHL110N65S3F N-Channel MOSFET is a highly efficient, reliable, and robust component that is well-suited for a variety of applications requiring high voltage, high current, and fast switching. Its combination of high performance, thermal stability, and ruggedness makes it an excellent choice for designers looking to optimize their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.6271 $50.6439
22+ $4.6172 $101.5784
34+ $4.4729 $152.0786
47+ $4.3286 $203.4442
60+ $4.1843 $251.0580
80+ $3.7514 $300.1120
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Availability: 900 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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