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STPSC1006G-TR

Part No STPSC1006G-TR
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Description DIODE SILICON 600V 10A D2PAK / Diode Silicon Carbide Schottky 600 V 10A Surface Mount D²PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr STMicroelectronics
Package Tape & Reel
Product Status Obsolete
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 150 µA @ 600 V
Capacitance @ Vr, F 650pF @ 0V, 1MHz
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature - Junction -40°C ~ 175°C
Base Product Number STPSC1006
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names 497-11209-6,497-11209-2,497-11209-1,STPSC1006GTR
Standard Package 1,000
Win Source Part Number 1097244-STPSC1006G-TR
Ultra Librarian 3D Model Ultra Librarian STPSC1006G-TR CAD Model

Description

STPSC1006G-TR Silicon Carbide Power Schottky Diode

The STPSC1006G-TR from STMicroelectronics is a state-of-the-art silicon carbide (SiC) power Schottky diode that is designed to offer superior performance in high-frequency and high-efficiency applications. This diode is part of STMicroelectronics' STPSC series, which is renowned for its ability to handle high voltages and currents with minimal losses, making it an ideal choice for a wide range of power conversion systems.

With a voltage rating of 600V and a forward current rating of 10A, the STPSC1006G-TR is capable of supporting the demanding requirements of advanced power conversion technologies. Its low forward voltage drop (Vf) and negligible switching losses provide highly efficient power management, which is critical for applications such as solar inverters, electric vehicle chargers, and power supply units.

The STPSC1006G-TR utilizes SiC technology, which allows it to operate at higher junction temperatures compared to traditional silicon diodes. This characteristic not only improves thermal management but also enhances system reliability and extends the lifespan of the product. Additionally, the diode's high surge current capability ensures robust performance under transient conditions, further contributing to the overall durability of the system it is incorporated into.

Encased in a surface-mount DPAK package, the STPSC1006G-TR is designed for compact and efficient PCB layout. Its package is optimized for reduced thermal resistance, allowing for better heat dissipation and contributing to the overall performance of the diode under high-power operation.

Key features of the STPSC1006G-TR include:

  • No reverse recovery charge (Qrr), which leads to reduced switching losses
  • High forward surge capability, essential for dealing with extreme operating conditions
  • Low thermal resistance, facilitating efficient heat dissipation
  • High-frequency operation, enabling the design of more compact and lightweight power converters
  • Robustness against high temperature and voltage fluctuations, ensuring long-term reliability

Overall, the STPSC1006G-TR is a superior choice for designers looking to optimize their power conversion systems for efficiency, reliability, and performance. STMicroelectronics' commitment to innovation is evident in this advanced SiC power Schottky diode, which is set to play a pivotal role in the future of power electronics.

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Quantity Unit Price Ext. Price
5+ $12.8699 $64.3495
11+ $10.5601 $116.1611
17+ $10.2300 $173.9100
24+ $9.9000 $237.6000
31+ $9.5700 $296.6700
41+ $8.5800 $351.7800
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Availability: 978 pieces
MOQ: 5 pcs
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