The STU2N62K3 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This device is part of the SuperMESH3™ Power MOSFET family, which is renowned for its exceptional efficiency and thermal performance. The STU2N62K3 is designed to handle high voltages up to 620V with a low on-resistance of 2.4 Ω typical, providing a current capacity of 2 A.
Encased in a robust DPAK package, the STU2N62K3 is engineered for applications requiring high-density power management. Its advanced technology ensures reduced conduction losses and improved switching performance, making it an ideal choice for high-efficiency power supplies, lighting applications, specifically LED lighting, and electronic ballasts, as well as for switch-mode power supplies (SMPS).
Key features of the STU2N62K3 include:
- Breakdown Voltage (V<sub>BRDSS): 620 V
- Continuous Drain Current (I<sub>D): 2 A
- On-resistance (R<sub>DS(on)): 2.4 Ω typical
- Low gate charge (Q<sub>g)
- Low input capacitance (C<sub>iss)
- 100% avalanche tested
- High dv/dt and avalanche capabilities
- High frequency operation
The STU2N62K3 also boasts a high level of reliability, with features such as 100% avalanche testing which ensures ruggedness against unexpected voltage spikes. The device's high dv/dt capability makes it resilient in fast-switching scenarios, while its low gate charge and input capacitance contribute to reduced switching losses, thus promoting energy efficiency.
STMicroelectronics' commitment to environmental sustainability is evident in the STU2N62K3, which is compliant with RoHS and Halogen-Free directives. This ensures that the product is suitable for use in environmentally sensitive applications and aligns with global efforts to reduce hazardous substances in electronic components.
Whether you're designing for industrial, consumer, or lighting applications, the STU2N62K3 offers a powerful, efficient, and reliable solution that meets the stringent requirements of modern electronic circuits.
