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Same model may have multiple batches, images only for reference.
IRLU8259PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLU8259PBF

Part No IRLU8259PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 25V 57A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 57A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 8.7mOhm at 21A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.35V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 900pF at 13V
Power Dissipation (Maximum) 48W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 75
MSL Level 1 (Unlimited)
Win Source Part Number 1188680-IRLU8259PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU8259PBF CAD Model

Description

The Infineon Technologies IRLU8259PBF is a MOSFET transistor that features an N-Channel polarity.

  • Power Dissipation: 48W
  • Drain-Source Breakdown Voltage: 25V
  • Current: 57A
  • Rds On: 8.7mOhm @ 21A and 10V
  • Gate Source Voltage: ±20V
  • Input Capacitance: 900pF @ 13V
  • MSL Level: 1 (unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3927 $58.9050
360+ $0.3222 $115.9920
560+ $0.3119 $174.6640
770+ $0.3015 $232.1550
990+ $0.2922 $289.2780
1,325+ $0.2622 $347.4150
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Availability: 4,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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