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STU2NK100Z

Part No STU2NK100Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 1.85A IPAK  /  N-Channel 1000 V 1.85A (Tc) 70W (Tc) Through Hole I-PAK
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 1.85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 499 pF @ 25 V
Power Dissipation (Max) 70W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number STU2NK100
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-12694-5,-497-12694-5,STU2NK100Z-ND
Standard Package 75
Win Source Part Number 1141534-STU2NK100Z
Ultra Librarian 3D Model Ultra Librarian STU2NK100Z CAD Model

Description

The STU2NK100Z is a state-of-the-art N-Channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This particular MOSFET is part of the STMicroelectronics' SuperMESH™ series, which is renowned for its unique combination of features that enhance performance and energy efficiency.

Key Features

  • High Voltage Capability: The STU2NK100Z operates at a high drain-source voltage (V<sub>DS) of 1000V, which is ideal for handling high-voltage applications with ease.
  • Low Gate Charge: With a reduced gate charge (Q<sub>g), this MOSFET offers a faster switching performance, which is crucial for high-efficiency power supplies and converters.
  • Low Threshold Voltage: The device features a low threshold voltage (V<sub>GS(th)), which ensures low-voltage drive capability, improving the overall efficiency of the system.
  • Zener-Protected: The STU2NK100Z comes with a built-in Zener diode that provides protection against gate oxide stress and ensures reliability under harsh conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche energy (E<sub>AS) ensuring robustness and long-term reliability for applications prone to high-energy pulses.

Applications

The versatility of the STU2NK100Z allows it to be widely used across various applications, including:

  • Switching applications
  • High-efficiency power supplies
  • Power converters
  • Motor control systems
  • Lighting systems
  • High-voltage switching circuits

Package and Quality

The STU2NK100Z is packaged in a TO-251 (IPAK) form factor, which is suitable for through-hole mounting, providing a robust and reliable mechanical and thermal connection. STMicroelectronics ensures the highest quality standards, with the STU2NK100Z being compliant with international standards and RoHS directives.

With its advanced features, the STU2NK100Z MOSFET from STMicroelectronics is an excellent choice for designers looking for a high-voltage, energy-efficient solution to power their next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8079 $52.5135
155+ $0.6629 $102.7495
235+ $0.6422 $150.9170
325+ $0.6215 $201.9875
420+ $0.6008 $252.3360
560+ $0.5386 $301.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,968 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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