The STU6N90K5 is a high voltage N-channel Power MOSFET designed by STMicroelectronics, optimized for a wide range of applications. This MOSFET is a part of the SuperMESH™ family, which is known for its excellent RDS(on) area ratio and reduced gate charge, ensuring high efficiency in power conversion and management tasks.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 900 V, the STU6N90K5 is suitable for high voltage applications, providing designers with a robust and reliable component for their power circuits.
• Low On-Resistance: The device boasts an on-resistance (RDS(on)) of just 5 Ω (typical), which helps in minimizing conduction losses and improving overall efficiency.
• High Current Rating: The MOSFET can handle a continuous drain current (I<sub>D) of up to 6 A, making it capable of driving significant loads.
• Reduced Gate Charge (Qg): The low gate charge ensures faster switching performance, which is critical for reducing switching losses in high-frequency power conversion systems.
• 100% Avalanche Tested: Ensures reliability and robustness by guaranteeing that each device can withstand high-energy pulses in the avalanche and commutation modes.
• Enhanced dv/dt Capability: The MOSFET is designed to handle fast voltage transients, making it ideal for rugged applications.
• DPAK Package: The surface-mount DPAK package allows for efficient heat dissipation and space-saving on the PCB, beneficial for compact designs.

Applications

The STU6N90K5 is versatile and can be used in various applications, including:

• Switch Mode Power Supplies (SMPS)
• High-efficiency DC-DC converters
• Power factor correction circuits
• LED lighting applications
• Electronic ballasts for fluorescent lighting
• Motor control circuits

With its combination of high voltage capability, low on-resistance, and fast switching performance, the STU6N90K5 from STMicroelectronics is an excellent choice for designers looking to improve the efficiency and reliability of their power management systems.