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STW17N62K3

Part No STW17N62K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 620V 15A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 620V
Continuous Drain Current at 25°C 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1104029-STW17N62K3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STW17N62K3 CAD Model

Description

STW17N62K3 - High-Performance N-Channel MOSFET from STMicroelectronics

The STW17N62K3 is a state-of-the-art N-channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed to deliver high efficiency and reliability for a wide range of applications, including switch-mode power supplies (SMPS), power management systems, and high-performance driving circuits.

Key Features:

  • Advanced Technology: The STW17N62K3 is built using STMicroelectronics' advanced MDmesh™ K3 technology, which combines a vertical structure with a strip layout for improved on-resistance and reduced gate charge.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 620V, this MOSFET can handle high voltage applications with ease, making it suitable for a broad range of industrial and consumer products.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of 0.165 Ω, which enhances overall efficiency by minimizing conduction losses.
  • High Current Handling: The STW17N62K3 can support a continuous drain current (I<sub>D) of up to 17A, making it capable of driving high current loads.
  • Enhanced Thermal Performance: The MOSFET is designed with an optimal thermal footprint, ensuring excellent heat dissipation and improved reliability under high-power and high-temperature conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring the device can withstand tough conditions without failure.

Applications:

The STW17N62K3 is versatile enough to be used in a variety of applications, such as:

  • Power supply units for servers, telecom, and industrial systems
  • LED lighting solutions
  • High-performance computing
  • Motor control circuits
  • Renewable energy systems, including solar inverters and wind turbines

With its combination of high voltage and current handling capabilities, low on-resistance, and robust thermal performance, the STW17N62K3 from STMicroelectronics represents a reliable and efficient solution for designers looking to optimize power management and conversion in their next-generation electronic products.

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