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STW20NM60

Part No STW20NM60
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 1500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 192W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 031593-STW20NM60
Family Name STW20NM60
Introduction Date October 12, 2001
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW20NM60 CAD Model

Description

STW20NM60 - Power MOSFET by STMicroelectronics

The STW20NM60 is a high-performance Power MOSFET brought to you by STMicroelectronics, one of the leading names in semiconductor innovation. This product is designed to meet the rigorous demands of power electronic applications, providing efficient power management and switching with outstanding reliability.

Key Features

  • Advanced Technology: The STW20NM60 utilizes MDmesh™ technology which combines the benefits of reduced on-resistance and fast switching speeds.
  • High Voltage Capability: With a drain-source voltage (VDS) of 600V, it is well-suited for high voltage applications that require efficient energy conversion.
  • Low On-Resistance: The device's low on-resistance (RDS(on)) minimizes conduction losses, leading to higher efficiency in power circuits.
  • High Current Rating: It can handle continuous drain currents (ID) up to 20A, making it capable of driving high current loads.
  • Reduced Gate Charge: The low gate charge (Qg) of this MOSFET enables faster switching, which is essential for reducing switching losses in power converters and inverters.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring the MOSFET can withstand tough conditions without failure.

Applications

The STW20NM60 is ideal for a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Efficiency DC-AC Converters
  • Motor Control Applications
  • Power Factor Correction (PFC) Circuits
  • Lighting Applications

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STW20NM60 is no exception, as it is manufactured in state-of-the-art facilities with stringent quality control measures. This ensures that each MOSFET provides consistent performance and durability for the lifetime of your application.

Environmental Compliance

The STW20NM60 is designed not only with performance in mind but also environmental responsibility. It complies with RoHS and other environmental regulations, reflecting STMicroelectronics' dedication to reducing the ecological footprint of their products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.2975 $52.7600
37+ $2.7057 $100.1109
58+ $2.6211 $152.0238
79+ $2.5366 $200.3914
102+ $2.4520 $250.1040
137+ $2.1984 $301.1808
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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