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STW30NM50N

Part No STW30NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 27A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 2740pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 115 mOhm @ 13.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1104039-STW30NM50N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW30NM50N CAD Model

Description

Introducing the STW30NM50N MOSFET by STMicroelectronics

The STW30NM50N is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This particular MOSFET is part of their MDmesh™ series, which is renowned for providing high efficiency in a wide range of applications. The STW30NM50N is specifically engineered for those who require a robust and high-performing component for their power management and conversion systems.

Key Features

  • High Voltage Capability: The STW30NM50N can handle drain-source voltages up to 500V, making it suitable for high voltage applications.
  • Low On-Resistance: With an RDS(on) value as low as 0.11 ohm, this MOSFET ensures minimal power loss and improved efficiency.
  • High Current Rating: It has a continuous drain current of 30A, allowing it to handle significant power levels.
  • MDmesh™ Technology: This technology combines a vertical structure with a new proprietary strip layout to yield one of the best on-resistance per area ratios.
  • Reduced Gate Charge: A lower gate charge (Qg) leads to faster switching and reduced switching losses.
  • 100% Avalanche Tested: Each unit is rigorously tested to ensure reliability under extreme conditions.

Applications

The STW30NM50N is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • High Efficiency DC-DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor Control Systems

Reliability and Performance

STMicroelectronics has a reputation for delivering products that perform reliably even under challenging conditions. The STW30NM50N is no exception, with its robust design and manufacturing process ensuring long-term stability and performance. Whether you're designing power supplies or working on motor control, this MOSFET will help you achieve high efficiency and power density.

Conclusion

For engineers and designers looking for a high-voltage, high-performance MOSFET, the STW30NM50N from STMicroelectronics offers an outstanding solution. With its advanced technology, low on-resistance, and high current capability, this MOSFET is an excellent choice for a wide range of power applications.

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