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STW34N65M5

Part No STW34N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 28A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 62.5nC @ 10V
Max Input Capacitance 2700pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 14A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 042957-STW34N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW34N65M5 CAD Model

Description

STW34N65M5 - N-channel 650 V, 0.079 Ohm typ., 31 A MDmesh™ M5 Power MOSFET in a TO-247 package

The STW34N65M5 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the innovative MDmesh™ M5 technology. This advanced MOSFET is designed to meet the rigorous demands of power conversion applications, offering a combination of low on-resistance and high switching speed. The device is encapsulated in a robust TO-247 package, known for its high power dissipation capability, making it suitable for a wide range of high-power applications.

With a drain-source voltage (V<sub>DS) of 650 V, the STW34N65M5 is optimized for high voltage applications that require efficient energy conversion. The MOSFET's on-resistance (R<sub>DS(on)) is as low as 0.079 Ohm typical, which minimizes conduction losses and improves overall efficiency. The MOSFET can handle a continuous drain current (I<sub>D) of up to 31 A, making it capable of driving high current loads.

One of the key features of the STW34N65M5 is its MDmesh™ M5 technology, which incorporates a proprietary vertical structure. This technology enables the MOSFET to achieve an optimal balance between on-resistance and switching performance, leading to reduced switching losses and improved total power efficiency. The device also boasts a low gate charge (Q<sub>g), which further enhances its switching performance.

The STW34N65M5 is designed to be rugged and reliable. It features a fast recovery diode, which is essential for high-speed switching applications. Moreover, the device is 100% avalanche tested, ensuring it can withstand harsh operating conditions and providing designers with added confidence in its durability and performance.

Suitable for a variety of applications, including switch-mode power supplies (SMPS), lighting applications, welding equipment, solar inverters, and industrial applications, the STW34N65M5 is a versatile component that can be integrated into numerous power conversion systems. Its high efficiency, reliability, and performance make it a preferred choice for engineers looking to optimize their power designs.

Overall, the STW34N65M5 from STMicroelectronics represents a state-of-the-art solution for designers seeking to improve power density, efficiency, and reliability in their high-voltage power conversion applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6100 $61.7100
26+ $4.6031 $119.6806
39+ $4.4592 $173.9088
54+ $4.3155 $233.0370
70+ $4.1716 $292.0120
93+ $3.7400 $347.8200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,300 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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