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STW38N65M5-4

Part No STW38N65M5-4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M5
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 95mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 100 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
Base Product Number STW38
Other Names -1138-STW38N65M5-4,497-18042,STW38N65M5-4
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278064-STW38N65M5-4
Ultra Librarian 3D Model Ultra Librarian STW38N65M5-4 CAD Model

Description

STW38N65M5-4 - STMicroelectronics

The STW38N65M5-4 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is part of the MDmesh™ M5 series, which stands out for its exceptional efficiency, making it suitable for a wide range of power applications, including switched-mode power supplies (SMPS), lighting, welding, and high-performance drives.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The STW38N65M5-4 boasts a low on-resistance, which minimizes conduction losses and enhances overall efficiency.
  • High Voltage Rating: With a maximum drain-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease.
  • High Current Capability: The device can support a continuous drain current (I<sub>D) of up to 31A, making it suitable for high current scenarios.
  • Fast Switching Speed: Fast switching characteristics ensure reduced switching losses and are ideal for high-frequency power converters.
  • Low Gate Charge (Q<sub>g): A low gate charge facilitates faster switching and reduced driving power.
  • 100% Avalanche Tested: Ensuring reliability and robustness in harsh conditions, the MOSFET is guaranteed to withstand repetitive avalanche events.
  • Zener-Protected: The gate-source is protected with an integrated Zener diode, which provides protection against electrostatic discharge (ESD) and enhances ruggedness.

Applications

The STW38N65M5-4 is designed for a variety of applications where power efficiency and reliability are critical. It can be used in:

  • Switched Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • LED Lighting solutions
  • High-performance DC-AC inverters for solar energy systems
  • Welding equipment
  • Electric vehicle charging stations
  • Uninterruptible Power Supplies (UPS)

With its advanced technology and robust design, the STW38N65M5-4 is a solid choice for designers looking to improve system efficiency and reliability in high-voltage and high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.3573 $58.8584
20+ $6.0367 $120.7340
30+ $5.8482 $175.4460
41+ $5.6595 $232.0395
53+ $5.4708 $289.9524
71+ $4.9048 $348.2408
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,270 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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