The STW3N170 is a high voltage, high performance N-channel Power MOSFET, designed and manufactured by STMicroelectronics. This robust semiconductor device is engineered to deliver optimal power regulation in a wide array of electronic applications, particularly in those demanding high efficiency and reliability under challenging conditions.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 1700V, the STW3N170 is capable of handling high voltage applications, making it suitable for industrial power supplies and lighting applications.
• Low On-Resistance: The device boasts a low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved power efficiency.
• Fast Switching Speed: The MOSFET's fast switching characteristics ensure minimal switching losses, contributing to the overall efficiency of the power conversion system.
• High Ruggedness: Its rugged design ensures reliable operation under extreme conditions, making it a preferred choice for demanding applications.
• 100% Avalanche Tested: Each unit is tested for avalanche ruggedness, ensuring its capability to handle high energy pulses.

Applications

The STW3N170 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High Voltage DC-DC Converters
• Power Factor Correction Circuits
• Electronic Ballasts for Fluorescent Lighting
• Welding Equipment
• High Voltage Motor Drives

Product Advantages

Integrating the STW3N170 into your design offers several advantages. Its high voltage capacity allows for fewer components in series, simplifying design and reducing costs. The low on-resistance and fast switching speeds lead to a more efficient power conversion, which is critical in energy-sensitive systems. The device's ruggedness and reliability reduce downtime and maintenance costs, making it an economic choice for industrial applications.

For detailed specifications and application support, STMicroelectronics provides comprehensive technical documentation, ensuring that engineers can maximize the potential of the STW3N170 in their designs.