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STW60N65M5

Part No STW60N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 46A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 139nC @ 10V
Max Input Capacitance 6810pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 255W (Tc)
Maximum Rds On at Id,Vgs 59 mOhm @ 23A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 212440-STW60N65M5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW60N65M5 CAD Model

Description

STW60N65M5 - High Performance N-Channel Power MOSFET

The STW60N65M5 is a state-of-the-art N-channel Power MOSFET from STMicroelectronics, renowned for its high-efficiency energy conversion and robust performance in a wide array of applications. This power MOSFET is designed using ST's advanced MDmesh™ M5 technology, which combines excellent RDS(on) characteristics with superior switching performance, making it an ideal choice for high-power applications that require both efficiency and reliability.

With a drain-source voltage (V<sub>DS) of 650V and a continuous drain current (I<sub>D) of 59A, the STW60N65M5 is capable of handling high power densities while maintaining a low thermal footprint. The device's low gate charge (Q<sub>g) and low on-resistance (RDS(on)) significantly reduce switching losses, contributing to the overall energy-saving features of the device.

The STW60N65M5 comes in a robust and industry-standard TO-247 package, ensuring compatibility with a wide range of heatsinking and mounting options. This package is well-suited for tough environmental conditions and can handle high surge currents without compromising the device's integrity.

Key features of the STW60N65M5 include:

  • Max RDS(on) of 0.036 Ohm at V<sub>GS = 10V
  • Low gate charge and input capacitance
  • Fast recovery diode
  • 100% avalanche tested
  • High dv/dt and avalanche capabilities
  • High peak current capability
  • Zener-protected

Applications for the STW60N65M5 are diverse and include switched-mode power supplies (SMPS), high-efficiency DC-DC converters, power factor correction circuits, LED lighting solutions, and high-performance computing. Its ruggedness also makes it suitable for industrial applications such as motor drives, welding equipment, and solar inverters, where reliability and efficiency are critical.

STMicroelectronics is committed to environmental stewardship and ensures that the STW60N65M5 complies with RoHS and other environmental directives. With its advanced technology and commitment to quality, the STW60N65M5 is a smart choice for designers looking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.7606 $59.0424
10+ $12.1113 $121.1130
15+ $11.7329 $175.9935
21+ $11.3543 $238.4403
27+ $10.9759 $296.3493
36+ $9.8404 $354.2544
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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