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STWA58N65DM2AG

Part No STWA58N65DM2AG
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 48A TO247 / N-Channel 650 V 48A (Tc) Through Hole TO-247 Long Leads
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Rohs State Need to verify
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr STMicroelectronics
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA58
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1341667-STWA58N65DM2AG
Ultra Librarian 3D Model Ultra Librarian STWA58N65DM2AG CAD Model

Description

The STWA58N65DM2AG is a high-performance, N-channel MDmesh™ DM2 Power MOSFET designed and manufactured by STMicroelectronics. This advanced MOSFET is built using ST's second generation of MDmesh technology, which combines the benefits of reduced on-resistance and fast switching performance with the high-voltage capability of traditional MOSFETs. This makes the STWA58N65DM2AG an ideal choice for a wide range of power applications, including switch mode power supplies (SMPS), lighting, welding, solar inverters, and high-performance drives.

Key Features

  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 650V, this MOSFET can handle high voltage applications with ease, making it suitable for industrial and consumer level power systems.
  • Low On-Resistance: The device features a low on-state resistance (R<sub>DS(on)) which translates to reduced conduction losses and improved efficiency in power conversion circuits.
  • High Current Capability: The STWA58N65DM2AG can support a continuous drain current (I<sub>D) of up to 56A, providing ample headroom for high current applications.
  • Enhanced Switching Performance: The fast switching characteristics of this MOSFET reduce switching losses, contributing to the overall efficiency of the system.
  • Improved dv/dt Capability: The robust body diode of the STWA58N65DM2AG is capable of withstanding high dv/dt rates, which is critical for applications with fast switching transients.
  • 100% Avalanche Tested: This product is guaranteed to be avalanche rated, ensuring reliability under extreme conditions.

Applications

The versatility of the STWA58N65DM2AG allows it to be used in a variety of applications, including:

  • High-efficiency SMPS
  • LED lighting solutions
  • Welding equipment
  • Solar power inverters
  • Electric vehicle charging stations
  • Motor control systems

Package and Quality

The STWA58N65DM2AG is housed in a TO-247 long leads package, providing excellent thermal performance and ease of mounting on heat sinks. STMicroelectronics ensures high-quality standards, with each device being rigorously tested before shipment to guarantee performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $32.1751 $64.3502
5+ $26.4001 $132.0005
7+ $25.5751 $179.0257
10+ $24.7500 $247.5000
13+ $23.9251 $311.0263
17+ $21.4500 $364.6500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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