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STWA70N60DM6

Part No STWA70N60DM6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ DM6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Mounting Type Through Hole
Supplier Device Package TO-247 Long Leads
Package / Case TO-247-3
Base Product Number STWA70
Other Names 497-18317,-1138-STWA70N60DM6
Standard Package 600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278109-STWA70N60DM6
Ultra Librarian 3D Model Ultra Librarian STWA70N60DM6 CAD Model

Description

STWA70N60DM6 - Power MOSFET by STMicroelectronics

The STWA70N60DM6 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology and a broad range of electronic components. This particular MOSFET is a part of ST's MDmesh™ DM6 series, which is renowned for its excellent energy efficiency and performance in a wide range of applications.

Constructed with an advanced silicon technology, the STWA70N60DM6 boasts an extremely low on-resistance (R<sub>DS(on)) of typically 0.049 Ω, which significantly reduces conduction losses. This feature, combined with its high voltage capability of 600V, makes it an ideal choice for high-efficiency power conversion applications, such as switch-mode power supplies, LED lighting solutions, solar inverters, welding equipment, and other high-performance power management systems.

The device comes in a rugged and compact package designed to handle high current and high temperature with ease, ensuring reliability and long operational life. The STWA70N60DM6 also features a fast recovery diode, which is optimized for high-frequency operation and helps to minimize switching losses, further enhancing the efficiency of the overall system.

With its low gate charge (Q<sub>g) and low input capacitance (C<sub>iss), the STWA70N60DM6 exhibits excellent switching performance. This characteristic is crucial for applications that require fast switching frequencies, thereby improving the power density of the systems in which it is used.

Another important feature of this power MOSFET is its enhanced avalanche ruggedness. This ensures that the device can withstand harsh operating conditions, making it suitable for applications that may experience unexpected voltage spikes or surges.

STMicroelectronics also ensures that the STWA70N60DM6 meets stringent environmental standards. It is compliant with RoHS and Halogen-free directives, which means it is manufactured without the use of hazardous substances, reflecting ST's commitment to environmental sustainability.

In summary, the STWA70N60DM6 from STMicroelectronics is a high-performance, energy-efficient power MOSFET that is well-suited for a variety of demanding applications. Its robust design, combined with outstanding electrical characteristics, makes it a reliable and effective choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $8.1572 $65.2576
18+ $6.6931 $120.4758
27+ $6.4839 $175.0653
37+ $6.2748 $232.1676
48+ $6.0658 $291.1584
64+ $5.4382 $348.0448
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Availability: 4,480 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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