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FLM1011-4F

Part No FLM1011-4F
Manufacturer Sumitomo Electric
Catalog Custom Parts (E - I)
Description High Power GaAs FETs, X-Band, 7dB, 10.7 11.7GHz, 1100mA
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RoHS Non-Compliant
Win Source Part Number 1198823-FLM1011-4F
Categories Custom Parts
Manufacturer Sumitomo Electric
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FLM1011-4F CAD Model

Description

The FLM1011-4F is a power GaAs FET designed for various communication applications. Manufactured by Sumitomo Electric, this device is engineered to deliver high power amplification with excellent linearity and efficiency. It is a key component in transmitters for various wireless communication systems.

Applications:

  • Cellular base stations
  • Repeaters
  • Wireless communication systems
  • High power amplifiers (HPAs)
  • Test and measurement equipment

Features:

  • High Output Power: Designed to deliver substantial output power, ensuring strong signal transmission.
  • High Gain: Offers significant gain, reducing the need for multiple amplification stages.
  • High Efficiency: Operates with high efficiency, minimizing power consumption and heat dissipation.
  • Excellent Linearity: Provides excellent linearity, minimizing signal distortion and ensuring high signal quality.
  • GaAs FET Technology: Utilizes GaAs FET technology for superior performance at high frequencies.

Benefits:

  • Improved Signal Strength: High output power enhances signal strength and coverage.
  • Reduced System Complexity: High gain simplifies system design and reduces the number of components needed.
  • Lower Operating Costs: High efficiency minimizes power consumption, reducing operating costs.
  • Enhanced Signal Quality: Excellent linearity ensures high signal quality and minimizes distortion.
  • Reliable Performance: GaAs FET technology provides reliable performance in demanding environments.

Technical Specifications:

While specific technical specifications may vary depending on the exact configuration and application, typical parameters for the FLM1011-4F include:

  • Frequency Range: Typically operates within cellular and wireless communication bands.
  • Output Power: High output power, often in the range of several watts.
  • Gain: Significant gain, usually specified in dB.
  • Efficiency: High efficiency, minimizing power consumption.
  • Operating Voltage: Specified operating voltage for optimal performance.
  • Operating Temperature: Wide operating temperature range for use in various environments.

The FLM1011-4F from Sumitomo Electric is a reliable and high-performance GaAs FET designed for demanding wireless communication applications. Its combination of high output power, gain, efficiency, and linearity makes it an excellent choice for cellular base stations, repeaters, and other high-power amplifier systems. Engineers and system designers can benefit from its robust performance and reliability in ensuring optimal signal transmission and minimal distortion.

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Quantity Unit Price Ext. Price
1+ $322.9876 $322.9876
2+ $289.5751 $579.1502
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