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Same model may have multiple batches, images only for reference.
TS13002ACT A3G Real Image
Same model may have multiple batches, images only for reference.

TS13002ACT A3G

Part No TS13002ACT A3G
Manufacturer Taiwan Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 400V 0.3A TO92 / Bipolar (BJT) Transistor NPN 400 V 300 mA 4MHz 600 mW Through Hole TO-92
Datasheet
TS13002ACT A3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Taiwan Semiconductor Corporation
Package Tape & Box (TB)
Transistor Type NPN
Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 200mA
Current - Collector Cutoff (Max) 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 100mA, 10V
Power - Max 600 mW
Frequency - Transition 4MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Base Product Number TS13002
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names TS13002ACTA3G,TS13002ACT A3G-ND
Standard Package 2,000
Win Source Part Number 1101241-TS13002ACT A3G
Ultra Librarian 3D Model Ultra Librarian TS13002ACT A3G CAD Model

Description

The Taiwan Semiconductor Corporation TS13002ACT A3G is an NPN bipolar transistor from Taiwan Semiconductor Corporation.

  • Collector-Emitter Breakdown Voltage (Max): 400V
  • Collector Current (Max): 300mA
  • Power Rating: 600mW
  • DC Current Gain: 25 @ 100mA and 10V
  • Frequency Transition: 4MHz
  • Vce Saturation: 1.5V @ 20mA and 200mA
  • Package: TO-92 (Through-Hole, Formed Leads)
  • Packaging: Tape and Boxed
  • ECCN: EAR99
  • Status: Not for new designs

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