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Same model may have multiple batches, images only for reference.
TSM2301CX RFG
Same model may have multiple batches, images only for reference.

TSM2301CX RFG

Part No TSM2301CX RFG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, P-CHANNEL, -20V,
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Max Input Capacitance 447pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 130 mOhm @ 2.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1114722-TSM2301CX RFG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian TSM2301CX RFG CAD Model

Description

The TSM2301CX RFG is a P-Channel MOSFET from Taiwan Semiconductor.

  • Category: Discrete Semiconductor Product
  • Package: SOT-23
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2.8A (Tc)
  • Gate-Source Threshold Voltage: 950mV @ 250μA
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Rds On @ Id,Vgs: 130 mOhm @ 2.8A, 4.5V
  • Mounting Type: SMD
  • Operating Temperature: -55°C to 150°C

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