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ZVN4306GVTC

Part No ZVN4306GVTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2.1A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 330 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1120313-ZVN4306GVTC
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Motor Drive & Control, Power Management
Ultra Librarian 3D Model Ultra Librarian ZVN4306GVTC CAD Model

Description

Introducing the ZVN4306GVTC MOSFET from Diodes Incorporated

Diodes Incorporated presents the ZVN4306GVTC, a robust and efficient N-Channel Enhancement Mode Vertical DMOS FET, a perfect solution for a wide range of applications. This MOSFET is designed to deliver high-performance with its low on-resistance and high thermal performance, making it an ideal choice for power management tasks.

Key Features of the ZVN4306GVTC

  • High Current Capability: The ZVN4306GVTC is capable of handling continuous drain currents up to 1.5A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 1.2Ω at V<sub>GS = 10V, this MOSFET ensures efficient operation and minimal power loss.
  • High Breakdown Voltage: The device features a high breakdown voltage of 60V, providing a good safety margin for fluctuating supply voltages and load conditions.
  • Enhancement Mode: As an enhancement-mode device, it requires a positive gate voltage to conduct, which provides inherent protection against unexpected turn-on due to voltage spikes.

Applications

The ZVN4306GVTC is versatile and can be used in a variety of applications, including:

  • Solenoid/Relay drivers
  • DC-DC converters
  • Motor control circuits
  • Power management functions

Package and Reliability

The ZVN4306GVTC comes in a compact SOT-223 package, which not only saves space on the PCB but also offers excellent power dissipation characteristics. Diodes Incorporated has designed this MOSFET to meet high reliability standards, ensuring a long operational life for your products.

Environmental and Quality Standards

Committed to environmental responsibility, the ZVN4306GVTC is RoHS compliant, meaning it is manufactured without the use of hazardous substances. Additionally, the MOSFET is characterized for operation from -55°C to +150°C, catering to applications that may experience extreme temperature conditions.

With its combination of performance, durability, and environmental compliance, the ZVN4306GVTC from Diodes Incorporated stands out as a superior choice for designers looking for a reliable N-Channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9420 $61.2300
150+ $0.7731 $115.9650
235+ $0.7488 $175.9680
320+ $0.7246 $231.8720
415+ $0.7005 $290.7075
555+ $0.6281 $348.5955
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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