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Same model may have multiple batches, images only for reference.
TSM3481CX6 Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM3481CX6

Part No TSM3481CX6
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description -30V, -5.7A, SINGLE P-CHANNEL PO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 48mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.09 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1047.98 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-26
Package / Case SOT-23-6
Base Product Number TSM3481
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380165-TSM3481CX6
Ultra Librarian 3D Model Ultra Librarian TSM3481CX6 CAD Model

Description

The TSM3481CX6 is a P-Channel MOSFET transistor from Taiwan Semiconductor Corporation.

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Voltage - Drain to Source (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Gate Charge (Qg) @ Vgs: 18.09 nC @ 10V
  • Power - Max: 1.6W (Ta)
  • Package / Case: SOT-23-6
  • Mounting Type: Surface Mount

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