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Same model may have multiple batches, images only for reference.
TSM4N60ECP ROG Real Image
Same model may have multiple batches, images only for reference.

TSM4N60ECP ROG

Part No TSM4N60ECP ROG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, PLANA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 545pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 86.2W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 2A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1065230-TSM4N60ECP ROG
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian TSM4N60ECP ROG CAD Model

Description

Taiwan Semiconductor's TSM4N60ECP ROG is an active N-channel MOSFET.

  • Maximum Power Dissipation: 86.2W (Tc)
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Supply and Demand Status: Sufficient
  • Case/Package: TO-252, (D-Pak)
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8043 $60.3225
180+ $0.6600 $118.8000
275+ $0.6393 $175.8075
375+ $0.6188 $232.0500
485+ $0.5981 $290.0785
650+ $0.5362 $348.5300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,800 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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