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ZXMP6A18KTC

Part No ZXMP6A18KTC
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 6.8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1580pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.15W (Ta)
Maximum Rds On at Id,Vgs 55 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 134070-ZXMP6A18KTC
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian ZXMP6A18KTC CAD Model

Description

Diodes Incorporated ZXMP6A18KTC P-Channel MOSFET

The ZXMP6A18KTC from Diodes Incorporated is a high-performance, P-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed for power management applications. This MOSFET is a robust and efficient solution for applications requiring a low on-resistance and high switching speed.

Key Features:

  • Low On-Resistance: The device offers an extremely low on-resistance (R<sub>DS(on)) of only 60 mΩ at V<sub>GS = -4.5V, making it highly efficient for power regulation in circuits.
  • High Power Dissipation: With a power dissipation of 1.4W, the ZXMP6A18KTC can handle significant power for its size, ideal for compact designs.
  • High Current Capability: This MOSFET supports a continuous drain current (I<sub>D) of -1.3A, which is suitable for a variety of applications including load switch and battery management.
  • Advanced Packaging: Encased in a small SOT-23 package, the ZXMP6A18KTC is perfect for space-constrained applications.
  • Gate Threshold Voltage: The device features a low gate threshold voltage (V<sub>GS(th)), which allows for operation at lower gate voltages and reduces power consumption.

Applications:

The ZXMP6A18KTC is versatile and can be used in a wide range of applications. It is particularly suited for:

  • Power Management in Portable Devices
  • Load Switching
  • Battery Management Systems
  • DC-DC Converters
  • Motor Control Circuits

Reliability and Performance:

Diodes Incorporated ensures that the ZXMP6A18KTC meets stringent quality and performance standards. The device is characterized by its reliability and longevity, which is crucial for designers looking for components that will endure the rigors of daily operation in various electronic products.

Conclusion:

The ZXMP6A18KTC P-Channel MOSFET from Diodes Incorporated is an excellent choice for engineers and designers looking for a MOSFET with low on-resistance, high current capability, and efficient power dissipation in a compact SOT-23 package. Its versatility makes it suitable for a wide array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3797 $51.2595
325+ $0.3116 $101.2700
500+ $0.3019 $150.9500
685+ $0.2921 $200.0885
890+ $0.2824 $251.3360
1,185+ $0.2532 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,664 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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