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Same model may have multiple batches, images only for reference.
TSM600P03CS Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM600P03CS

Part No TSM600P03CS
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description -30V, -4.7A, SINGLE P-CHANNEL PO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Package Tape & Reel
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 560 pF @ 15 V
Power Dissipation (Max) 2.1W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number TSM600
Standard Package 5,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 692126-TSM600P03CS
Ultra Librarian 3D Model Ultra Librarian TSM600P03CS CAD Model

Description

The 692126-TSM600P03CS is a P-Channel MOSFET transistor designed for various electronic applications.

  • Voltage: Drain-to-source voltage of 30V
  • Current: Continuous drain current of 4.7A
  • Resistance: On-resistance is 60mOhm @ 3A and 10V
  • Threshold Voltage: Gate threshold voltage of 2.5V @ 250µA
  • Power Dissipation: 2.1W
  • Temperature Range: -55°C to 150°C
  • Package Type: 8-SOIC
  • Package Quantity: 5,000 pieces
  • Market Status: Currently active
  • Product Name: 692126-TSM600P03CS

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