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Same model may have multiple batches, images only for reference.
TSM9933DCS RLG
Same model may have multiple batches, images only for reference.

TSM9933DCS RLG

Part No TSM9933DCS RLG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, DUAL, P-CHANNEL, -20V, -
Datasheet
TSM9933DCS RLG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.7A (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.7A, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 8.5nC @ 4.5V
Max Input Capacitance 640pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1114760-TSM9933DCS RLG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM9933DCS RLG CAD Model

Description

This electronic component is a 2 P-Channel (Dual) FET with a Win Source Part Number of 1114760-TSM9933DCS RLG.

  • Product Name: TSM9933DCS RLG
  • Win Source Part Number: 1114760-TSM9933DCS RLG
  • Type: 2 P-Channel (Dual) FET
  • Category: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SOP
  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 4.7A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Gate Charge: 8.5nC @ 4.5V
  • Input Capacitance: 640pF @ 10V
  • Rds On: 60 mOhm @ 4.7A, 4.5V
  • Quality: Standard

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1996 $59.9800
120+ $0.9843 $118.1160
185+ $0.9536 $176.4160
255+ $0.9228 $235.3140
325+ $0.8920 $289.9000
435+ $0.7997 $347.8695
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