The BQ2201SN-NTRG4 is a state-of-the-art Nonvolatile SRAM (NVSRAM) controller from Texas Instruments, designed to ensure the integrity of SRAM data during power loss. This innovative device is an ideal solution for a wide range of applications that require reliable data retention during unexpected power failures.

Key Features

• Automatic Power-Fail Detection: The BQ2201SN-NTRG4 has an in-built power-fail detection circuit that quickly senses when the supply voltage drops below a critical threshold, ensuring timely initiation of the nonvolatile save cycle.
• Integrated Energy Storage: To facilitate the save operation, it includes a controlled switch that connects an external capacitor used for energy storage, providing the necessary power to complete the store operation.
• Write Protection: During power-down, the device automatically write-protects the SRAM, preventing data corruption due to incomplete writes.
• Low-Power CMOS: Manufactured using CMOS technology, the BQ2201SN-NTRG4 offers low-power operation, which is critical for battery-powered and power-sensitive applications.

Applications

The BQ2201SN-NTRG4 is versatile and can be employed in various sectors, including:

• Industrial control systems
• Medical equipment
• Telecommunications infrastructure
• Data logging and storage systems
• Point of Sale (POS) terminals

Technical Specifications

With its robust feature set and Texas Instruments' reputation for quality, the BQ2201SN-NTRG4 NVSRAM controller is a reliable choice for preserving critical data and ensuring the continuous operation of electronic systems.