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CSD17305Q5A Real Image CSD17305Q5A real image3106
Same model may have multiple batches, images only for reference.
CSD17305Q5A Real Image CSD17305Q5A real image3106
CSD17305Q5A Real Image CSD17305Q5A real image3106
Same model may have multiple batches, images only for reference.

CSD17305Q5A

Part No CSD17305Q5A
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 100A 8SON
Datasheet
CSD17305Q5A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 18.3nC @ 4.5V
Max Input Capacitance 2600pF @ 15V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 3.1W (Ta)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 30A, 8V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 013362-CSD17305Q5A
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD17305Q5A CAD Model

Description

CSD17305Q5A MOSFET

The CSD17305Q5A is engineered to provide high-speed switching and reduced power loss, contributing to overall system efficiency. Its versatility makes it a valuable component in numerous applications.

  • Applications: Power supply units, Telecommunications, RF amplifiers

Features & Benefits

  • High switching speed reduces power consumption
  • Optimal thermal conductivity for high-dependability use
  • Reduced gate charge for increased efficiency

This MOSFET supports innovative designs with its ability to handle fast dynamic power loads seamlessly.

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