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CSD19502Q5B

Part No CSD19502Q5B
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 100A 8SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.3V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 4870pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 195W (Tc)
Maximum Rds On at Id,Vgs 4.1 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 140546-CSD19502Q5B
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD19502Q5B CAD Model

Description

Product Description

The CSD19502Q5B offers advanced power management solutions with its highly efficient MOSFET design. It is perfect for applications where high-speed switching and low conduction losses are critical.

Features and Benefits

  • Ultra-low on-resistance for less heat generation.
  • High-current carrying capability.
  • Compact design for space-saving installations.
  • Excellent gate charge characteristics.

Applications

  • DC-DC converters.
  • Load switch applications.
  • Battery-powered devices.
  • Solar inverters.

Additional Details

This device is optimized for both efficiency and space, allowing designers greater flexibility while maintaining high performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9105 $52.3890
42+ $2.3881 $100.3002
65+ $2.3135 $150.3775
90+ $2.2389 $201.5010
116+ $2.1642 $251.0472
155+ $1.9403 $300.7465
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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