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CSD23285F5

Part No CSD23285F5
Manufacturer Texas Instruments
Catalog FETs - Single
Description 12-V, P-Channel FemtoFET MOSFET | MOSFET P-CH 12V
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 12V
Id - Continuous Drain Current 5.4A
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Maximum) at Id, Vgs 35mOhm at 1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 950mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs 4.2nC at 4.5V
Gate Source Voltage (Maximum) -6V
Input Capacitance (Ciss) (Maximum) at Vds 628pF at 6V
Power Dissipation (Maximum) 500mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 3-PICOSTAR
Manufacturer Package 3-XFDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 709934-CSD23285F5
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian CSD23285F5 CAD Model

Description

The CSD23285F5 is a state-of-the-art MOSFET from Texas Instruments, designed to deliver high efficiency and power density in a compact form factor. This product is part of TI's NexFET™ technology line, which is renowned for its advanced power management capabilities.

Key Features

  • Low On-Resistance: The CSD23285F5 features an ultra-low on-resistance (R<sub>DS(on)), which minimizes power loss and improves overall efficiency, making it ideal for power-sensitive applications.
  • Compact Footprint: With a 2mm x 2mm SON package, this MOSFET is perfect for space-constrained applications where board space is at a premium.
  • High Continuous Drain Current: This device supports a high continuous drain current (I<sub>D), allowing it to handle higher power applications without compromising performance.
  • Thermal Management: The CSD23285F5 is designed with excellent thermal characteristics, ensuring reliable operation even under high temperature conditions.
  • Advanced Gate Control: The device offers precise gate control, which enables fast switching and reduced switching losses, further enhancing its efficiency.

Applications

The CSD23285F5 is versatile and can be used in a variety of applications, including but not limited to:

  • DC/DC conversion
  • Power supply modules
  • Load switches
  • Battery management systems
  • Point of Load (POL) solutions

Performance and Quality

As with all Texas Instruments products, the CSD23285F5 is manufactured to the highest quality standards. The device undergoes rigorous testing to ensure performance, durability, and reliability. Engineers and designers can trust this MOSFET to deliver consistent performance even in the most demanding environments.

Support and Resources

For additional information, technical support, and resources, customers can access a wide range of tools on the Texas Instruments website, including datasheets, design tools, and product support forums. TI's commitment to customer service ensures that you have all the necessary resources at your disposal to integrate the CSD23285F5 into your next project successfully.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1188 $50.4900
900+ $0.1113 $100.1700
1,395+ $0.1076 $150.1020
2,000+ $0.1000 $200.0000
2,600+ $0.0963 $250.3800
3,245+ $0.0925 $300.1625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 111,140 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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