The JAN2N428 is a high-performance semiconductor device from Texas Instruments, designed to meet the stringent requirements of the aerospace and defense industries. This product is a NPN bipolar junction transistor (BJT) that offers reliable operation even under extreme conditions, making it an ideal component for mission-critical applications.
Key Features
- High Reliability: Manufactured to comply with the Joint Army/Navy (JAN) specifications, the JAN2N428 ensures top-tier performance and durability.
- Wide Operating Temperature Range: This component is capable of operating over a broad temperature range, which is critical for systems exposed to harsh environmental conditions.
- Robust Voltage Ratings: With excellent voltage handling capabilities, the JAN2N428 can manage significant power levels, contributing to the versatility of its applications.
- Hermetically Sealed: The device comes in a hermetically sealed package, ensuring protection against moisture and other environmental contaminants.
- Lead (Pb)-Free: In alignment with environmental standards, the JAN2N428 is designed to be lead-free, minimizing the environmental impact.
Applications
The JAN2N428 transistor is suited for a variety of high-reliability applications, including but not limited to:
- Avionics and aerospace systems
- Military communication equipment
- Power regulation modules
- High-reliability consumer electronics
- Automotive electronics
Technical Specifications
| Parameter |
Value |
| Configuration |
Single |
| Collector-Emitter Voltage VCEO Max |
50 V |
| Emitter-Base Voltage VEBO |
6 V |
| Collector Current Continuous Max |
1 A |
| Power Dissipation |
800 mW |
For detailed information regarding the JAN2N428, including full datasheets, application notes, and ordering information, please visit the Texas Instruments official website or contact their customer support team.