The Rohm Semiconductor MOSFET with Schottky Diode (Isolated) FET Feature is a P-Channel electronic component.

• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 1A @ 25°C
• Max Gate Charge: 2.1nC @ 4.5V
• Max Input Capacitance: 150pF @ 10V
• Maximum Gate-Source Voltage: ±12V
• Maximum Rds On @ Id,Vgs: 390 mOhm @ 1A, 4.5V
• Application: Discrete Semiconductor Products
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Power Dissipation (Max): 1W (Ta)
• Temperature Range: 150°C (TJ)
• Mounting: SMD (SMT) technology
• Case/Package: TUMT5
• Dimension: 6-SMD (5 Leads), Flat Lead
• Packaging: Reel - TR
• Supply and Demand Status: balanced