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2SA1015-GR(SP

Part No 2SA1015-GR(SP
Manufacturer Toshiba Semiconductor and Storage
Catalog Miscellaneous
Sample
Rohs State rohs
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Categories Uncategorized
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 815092-2SA1015-GR(SP
Ultra Librarian 3D Model Ultra Librarian 2SA1015-GR(SP CAD Model

Description

The 2SA1015-GR(SP) is a PNP epitaxial silicon transistor manufactured by Toshiba Semiconductor and Storage. This transistor is designed for use in a variety of audio amplifier and switching applications where high gain and low noise are required.

Applications

  • Audio Amplifiers: Used as an amplification stage in audio amplifiers to increase signal strength.
  • Switching Circuits: Employed in switching circuits to control the flow of current in various electronic devices.
  • Signal Processing Circuits: Utilized in signal processing circuits to amplify and process analog signals.
  • General Purpose Amplification: Suitable for general-purpose amplification in a wide range of electronic devices.
  • Driver Stages: Used as a driver transistor for higher power devices.

Features

  • PNP Epitaxial Silicon Transistor: Offers high gain and low noise characteristics.
  • High Gain: Provides significant amplification for weak signals.
  • Low Noise: Minimizes added noise, ensuring high signal quality.
  • Small Signal Amplifier: Designed for use in small signal amplification applications.
  • Compact Package: Allows for easy integration into various electronic systems.

Benefits

  • Enhanced Audio Quality: The low noise characteristics ensure clear and high-quality audio amplification.
  • Efficient Switching: Provides efficient switching performance for controlling current flow in electronic circuits.
  • Improved Signal Processing: Amplifies and processes analog signals with minimal distortion.
  • Versatile Application: Suitable for a wide range of general-purpose amplification needs.
  • Simplified Design: Easy to integrate into existing and new designs.

Additional Details

The 2SA1015-GR(SP) transistor features a collector-emitter voltage of -50V and a collector current of -150mA. It has a typical current gain (hFE) of 200 to 400, ensuring effective amplification. The transistor is designed to operate within a temperature range of -55°C to +150°C. It is commonly used in audio amplifiers, signal processing circuits, and other applications that require high gain and low noise amplification. The device is lead-free and RoHS compliant.

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