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Same model may have multiple batches, images only for reference.
2SA1015-Y(TE2,F,T)
Same model may have multiple batches, images only for reference.

2SA1015-Y(TE2,F,T)

Part No 2SA1015-Y(TE2,F,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Transistor 0.15A 50V PNP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-226-3
Collector Emitter Breakdown Voltage 50 V
Collector Emitter Voltage (VCEO) 300 mV
Max Collector Current 150 mA
Max Power Dissipation 400 mW
Mount Through Hole
Packaging Tape & Reel (TR)
RoHS Compliant
Transition Frequency 80 MHz
Win Source Part Number 1036485-2SA1015-Y(TE2,F,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1015-Y(TE2,F,T) CAD Model

Description

The Toshiba Semiconductor and Storage 2SA1015-Y(TE2,F,T) RF transistor is a low-popularity, SMD (SMT) mounted component with a collector-emitter breakdown voltage of 50 V and a maximum collector current of 150 mA.

  • Maximum power dissipation: 400 mW
  • Transition frequency: 80 MHz
  • RoHS compliant: Yes
  • Case/Package: TO-226-3

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