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SSM6P15FE(TE85L,F)

Part No SSM6P15FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 0.1A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA
Maximum Rds On at Id,Vgs 12 Ohm @ 10mA, 4V
Gate-Source Threshold Voltage 1.7V @ 100μA
Max Input Capacitance 9.1pF @ 3V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 096950-SSM6P15FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6P15FE(TE85L,F) CAD Model

Description

This FET (Field-Effect Transistor) is a dual 2 P-Channel discrete semiconductor product manufactured by Toshiba Semiconductor and Storage.

  • Part Number: 096950-SSM6P15FE(TE85L,F)
  • Category: Discrete Semiconductor Products
  • Packaging: reel - TR
  • Mounting: surface mount device (SMD)
  • Feature: logic level gate FET
  • Maximum Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 100mA
  • Gate-Source Threshold Voltage: 1.7V @ 100μA
  • Maximum Input Capacitance: 9.1pF @ 3V
  • Maximum Rds On at Id,Vgs: 12 Ohm @ 10mA, 4V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0903 $59.9665
130+ $0.8940 $116.2200
200+ $0.8663 $173.2600
280+ $0.8385 $234.7800
360+ $0.8108 $291.8880
480+ $0.7265 $348.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,950 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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