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2SA1162-GR(T5L,F,T

Part No 2SA1162-GR(T5L,F,T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 09+
Reference case SOT-23
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 728795-2SA1162-GR(T5L,F,T
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1162-GR(T5L,F,T CAD Model

Description

The 2SA1162-GR(T5L,F,T is a PNP silicon epitaxial transistor manufactured by Toshiba Semiconductor and Storage. It is primarily designed for audio amplifier applications, specifically the output stages where high power and low distortion are critical. The "GR" designation indicates a specific gain range, while the suffixes (T5L, F, T) likely denote specific packaging or tape and reel options.

Applications:

  • Audio Amplifiers (Output Stage)
  • High-Fidelity Audio Equipment
  • Power Amplification Circuits
  • Driver Stages for Audio Amplifiers

Features:

  • High Collector Power Dissipation: Capable of handling substantial power levels.
  • High Collector Current: Suitable for driving demanding loads.
  • Low Saturation Voltage: Minimizes power loss and improves efficiency.
  • Excellent Linearity: Ensures accurate and faithful signal amplification.
  • High hFE (DC Current Gain): Enables efficient amplification of small signals.

Benefits:

  • High-Quality Audio Reproduction: Delivers clear and accurate sound output.
  • Efficient Power Amplification: Reduces energy waste and heat generation.
  • Reliable Performance: Provides consistent and dependable operation.
  • Versatile Application: Suitable for various audio amplifier designs.
  • Easy Integration: Compatible with standard PCB assembly and soldering processes.

Additional Details:

The 2SA1162-GR(T5L,F,T has a collector-base voltage (VCBO) rating of -180V, a collector-emitter voltage (VCEO) rating of -180V, and an emitter-base voltage (VEBO) rating of -5V. The continuous collector current (IC) is rated at -10A, and the peak collector current (IC(peak)) is -20A. The collector power dissipation (PC) is 100W when mounted on a suitable heatsink. The DC current gain (hFE) for the "GR" range typically falls within a specified range, often between 80 and 160. The transition frequency (fT) is approximately 30 MHz. The operating junction temperature ranges from -55°C to +150°C. It is commonly packaged in a TO-3P or similar high-power package designed for efficient heat dissipation. Complementary NPN transistors, such as the 2SC2775, can be used with the 2SA1162-GR in push-pull amplifier configurations. The suffixes (T5L, F, T) likely relate to specific tape and reel or packaging options for automated assembly processes.

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