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2SA1612-T1B

Part No 2SA1612-T1B
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 153850-2SA1612-T1B
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA1612-T1B CAD Model

Description

2SA1612-T1B Transistor

The 2SA1612-T1B is a highly reliable PNP bipolar junction transistor (BJT) used primarily for amplification and switching purposes. Its compact design and efficient performance make it a perfect choice for various electronic applications.

Features and Benefits:

  • High Collector-Emitter Voltage: Ideal for higher voltage operations.
  • Low Saturation Voltage: Ensures efficient power use and minimal energy loss.
  • Compact Package: The small footprint makes it suitable for densely packed electronic boards.

Applications:

  • Audio amplifiers
  • Signal amplification in communication devices
  • Switching circuits
  • Consumer electronics

The 2SA1612-T1B is an excellent choice for designers seeking reliable performance in compact and efficient electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.0651 $81.1953
6+ $22.2072 $133.2432
9+ $21.5130 $193.6170
12+ $20.8200 $249.8400
15+ $20.1259 $301.8885
20+ $18.0434 $360.8680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,900 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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