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2SA1618-Y(TE85L,F)

Part No 2SA1618-Y(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 50V 0.15A SMV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual) Matched Pair, Common Emitter
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 120 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 005764-2SA1618-Y(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1618-Y(TE85L,F) CAD Model

Description

2SA1618-Y(TE85L,F) Transistor

The 2SA1618-Y(TE85L,F) is a high-quality PNP bipolar junction transistor ideal for applications requiring efficient amplification and switching capabilities. With excellent electrical characteristics, it is suitable for both linear and digital applications.

Key Features and Benefits

  • High Current Gain: Ensures excellent amplification performance.
  • Low Saturation Voltage: Reduces power loss and enhances efficiency.
  • Thermal Stability: Maintains performance across a wide range of temperatures.
  • Compact Package: Eases PCB layout and saves space.

Applications

  • Audio Amplifiers
  • Signal Processing Circuits
  • Voltage Regulators
  • Switching Circuits

This transistor's robust design and reliability make it a preferred choice for designers requiring a versatile PNP transistor in their circuits.

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