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Same model may have multiple batches, images only for reference.
RN1704JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1704JE(TE85L,F)

Part No RN1704JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ESV
Datasheet
RN1704JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 099574-RN1704JE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1704JE(TE85L,F) CAD Model

Description

This Toshiba Semiconductor and Storage product has the Win Source Part Number 099574-RN1704JE(TE85L,F).

  • Mounting: SMD (SMT) technology
  • Frequency Transition: 250MHz
  • Transistor Polarity: 2 NPN-Pre-Biased (Dual) (Emitter Coupled)
  • Resistor-Base (R1): 47k
  • Resistor-Emitter Base (R2): 47k
  • Category: Discrete semiconductor products
  • Status: Active
  • Case or Package: ESV
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Max Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Popularity: Medium
  • Risk of Fake Products: 30%
  • Supply and Demand Status: Sufficient

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