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2SA1832FV-Y

Part No 2SA1832FV-Y
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 50V 0.15A 100mW 3-Pin VESM
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 154026-2SA1832FV-Y
Popularity Low
Supply and Demand Status Sufficient
Family Name 2SA1832FV
Introduction Date June 17, 2004
ECCN EAR99
Country of Origin Japan, Thailand
Ultra Librarian 3D Model Ultra Librarian 2SA1832FV-Y CAD Model

Description

2SA1832FV-Y - High Voltage, High Gain PNP Transistor

The 2SA1832FV-Y combines high voltage capacity with the Y binning, offering higher gain features for sophisticated electronic designs.

  • Applications:
    • Advanced signal amplification systems
    • High-efficiency voltage control circuits
    • Specialized industrial electronic equipment
    • Customized switching applications
  • Features and Benefits:
    • Coupled high voltage and gain capabilities
    • Increased durability for high-stress electronics
    • Minimized power loss with efficient design
    • Optimized for high-performance requirements

Engineers looking for a top-tier transistor that handles both high voltage and high gain demands will find the 2SA1832FV-Y an exceptional choice.

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Shipping Information

Shipped from HK warehouse
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