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2SA1943N

Part No 2SA1943N
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 230V 15A TO-3PN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Transistor Polarity PNP
Maximum Current Collector 15A
VCEO Maximum Collector-Emitter Breakdown Voltage 230V
Max Vce (sat) 3V @ 800mA, 8A
Collector Cut-off Current(Max) 5μA (ICBO)
Typical Gain (hFE) (Min) 80 @ 1A, 5V
Maximum Power Dissipation 150W
Frequency - Transition 30MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Win Source Part Number 075400-2SA1943N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1943N CAD Model

Description

2SA1943N

The 2SA1943N is a robust PNP bipolar junction transistor (BJT) that delivers exceptional operational capabilities for high-end electronic applications. Its rugged design ensures long-lasting performance, making it a staple in power amplification and switching tasks.

Features and Benefits:

  • Highly efficient with excellent current amplification
  • Durable construction suitable for high-power applications
  • Reliable performance with low thermal resistance

Applications:

  • High-fidelity audio equipment
  • DC-AC converters
  • High-frequency switching applications
  • Industrial inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1616 $52.2720
105+ $0.9532 $100.0860
165+ $0.9234 $152.3610
225+ $0.8936 $201.0600
290+ $0.8638 $250.5020
390+ $0.7744 $302.0160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,764 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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