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Same model may have multiple batches, images only for reference.
2SA949-O Real Image
Same model may have multiple batches, images only for reference.

2SA949-O

Part No 2SA949-O
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 50MA 150V TO226-3
Datasheet
2SA949-O Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 150V
Max Vce (sat) 800mV @ 1mA, 10A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 10mA, 5V
Maximum Power Dissipation 800mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 154373-2SA949-O
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA949-O CAD Model

Description

2SA949-O Transistor

The 2SA949-O is a high-performance PNP transistor that offers excellent output characteristics. Known for its robustness, this component is perfect for applications requiring high energy efficiency and reliability.

  • Applications:
    • Power Supplies
    • Automotive Electronics
    • Motor Drivers
  • Features and Benefits:
    • Energy Efficient: Maximizes energy utilization, reducing waste.
    • High Current Gain: Ensures superior performance for high-demand applications.
    • Strong Thermal Balance: Maintains durability under high thermal loads.
  • Additional Details: Suitable for applications where energy conservation and performance are a priority.

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