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Same model may have multiple batches, images only for reference.
2SA965-Y(F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SA965-Y(F,M)

Part No 2SA965-Y(F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 800MA 120V TO226-3
Datasheet
2SA965-Y(F,M) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package LSTM
Win Source Part Number 1011483-2SA965-Y(F,M)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SA965-Y(F,M) CAD Model

Description

The 2SA965-Y(F,M) is a PNP transistor that has been designed for use in a variety of electronic products.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Maximum Power Dissipation: 900mW

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