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Same model may have multiple batches, images only for reference.
2SC1627A-O,PASF(M Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC1627A-O,PASF(M

Part No 2SC1627A-O,PASF(M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 400MA 80V TO226-3
Datasheet
2SC1627A-O,PASF(M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 400mA
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 400mV @ 20mA, 200A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 50mA, 2V
Maximum Power Dissipation 800mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004333-2SC1627A-O,PASF(M
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC1627A-O,PASF(M CAD Model

Description

This electronic component is a product from Toshiba Semiconductor and Storage manufacturer. It is a NPN transistor with a TO-92MOD package.

  • Maximum Current Collector: 400mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
  • Max Vce (sat): 400mV @ 20mA, 200A
  • Collector Cut-off Current(Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 70 @ 50mA, 2V
  • Maximum Power Dissipation: 800mW
  • Supply and Demand Status: Sufficient
  • Category: Discrete Semiconductor Products

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