The 2SC2458-BL is a silicon NPN epitaxial planar transistor produced by Toshiba Semiconductor and Storage. It is designed for low-noise amplifier applications.

Applications

• Low-noise amplifier circuits
• Audio amplifiers
• High-gain amplifier stages
• General-purpose amplification

Features

• Low noise figure: Typically 1.0 dB
• High gain: High hFE provides substantial amplification
• Low collector-emitter saturation voltage
• Excellent linearity
• Small signal amplifier

Benefits

• Improved signal clarity in sensitive audio or RF systems due to low noise.
• Efficient amplification with minimal signal distortion.
• Reduced power consumption in amplifier circuits.
• Enhanced performance in high-gain applications.
• Easy integration into existing circuit designs.

Technical Specifications

The 2SC2458-BL transistor has the following key specifications:

• Polarity: NPN
• Collector-Emitter Voltage (VCEO): 30 V
• Collector-Base Voltage (VCBO): 30 V
• Emitter-Base Voltage (VEBO): 5 V
• Collector Current (IC): 50 mA
• Collector Dissipation (PC): 250 mW
• Current Gain (hFE): 200-400 (BL rank)
• Noise Figure (NF): 1.0 dB (typical)
• Transition Frequency (fT): 1 GHz (typical)

The 'BL' in the part number indicates a specific hFE (DC current gain) rank, in this case 200-400. This allows designers to select components with consistent gain characteristics.

This transistor is commonly used in various amplifier stages due to its excellent noise performance and gain characteristics. It is designed for audio and RF applications, and can be found in preamplifiers and signal processing circuits.