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Same model may have multiple batches, images only for reference.
2SC2655-Y(TE6,F,M) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2655-Y(TE6,F,M)

Part No 2SC2655-Y(TE6,F,M)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 2A 50V TO226-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 900mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1004353-2SC2655-Y(TE6,F,M)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SC2655-Y(TE6,F,M) CAD Model

Description

The 2SC2655-Y(TE6,F,M) is an NPN transistor with a maximum collector-emitter breakdown voltage of 50V manufactured by Toshiba Semiconductor and Storage.

  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Current Collector: 2A
  • Maximum Power Dissipation: 900mW
  • Frequency Transition: 100MHz
  • Typical Gain (hFE) (Min) @ 500mA, 2V: 70
  • Package: TO-92MOD
  • Temperature Range: 150°C (TJ)
  • Packaging: Bulk
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,230 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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