The 2SC2713-GR(TE85L is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is specifically designed for low-noise amplifier applications in the VHF and UHF bands. The 'GR' designation indicates a specific gain rank.

Applications:

• Low-noise amplifiers (LNAs) for VHF/UHF receivers
• RF front-end circuits
• High-frequency oscillators
• Mixer circuits
• Communication equipment (e.g., radio receivers, satellite tuners)

Features:

• Extremely low noise figure
• High gain
• High transition frequency (fT)
• Low collector-base capacitance
• Miniature package for compact designs

Benefits:

• Superior signal reception in VHF/UHF bands
• Enhanced sensitivity for weak signals
• Improved system performance in communication devices
• Reduced interference and noise in RF circuits
• Smaller footprint for space-constrained applications

Technical Specifications:

• Polarity: NPN
• Collector-Emitter Voltage (VCEO): 12V
• Collector-Base Voltage (VCBO): 15V
• Emitter-Base Voltage (VEBO): 3V
• Collector Current (IC): 30mA
• Collector Dissipation (PC): 150mW
• Transition Frequency (fT): 7 GHz (typical)
• Noise Figure (NF): 0.9 dB (typical) at 1 GHz

The 2SC2713-GR(TE85L is optimized for applications where minimizing noise and maximizing gain are crucial. Its use in VHF/UHF receivers ensures reliable and high-quality signal reception. Its characteristics make it suitable in sensitive RF front ends.