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Same model may have multiple batches, images only for reference.
PSMN3R5-80PS,127 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

PSMN3R5-80PS,127

Part No PSMN3R5-80PS,127
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A TO220AB
Datasheet
PSMN3R5-80PS,127 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 139nC @ 10V
Max Input Capacitance 9961pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 338W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1090407-PSMN3R5-80PS,127
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN3R5-80PS,127 CAD Model

Description

The Nexperia USA Inc. PSMN3R5-80PS,127 is a N-Channel MOSFET transistor that has a maximum power dissipation of 338W (Tc).

  • Type: N-Channel MOSFET transistor
  • Maximum Power Dissipation: 338W (Tc)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 120A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 139nC @ 10V
  • Maximum Input Capacitance: 9961pF @ 40V
  • Maximum Rds On at Id,Vgs: 3.5 mOhm @ 25A, 10V
  • Package: TO-220AB
  • Dimension: TO-220-3
  • Category: discrete semiconductor products
  • Status: active
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and demand status: sufficient

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160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
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