The 2SC5089 is a silicon NPN epitaxial planar transistor from Toshiba Semiconductor and Storage. It's engineered for low-noise amplifier applications, particularly in VHF and UHF bands. Its key attributes are its low noise figure and high gain, making it a strong choice for sensitive receiver front-ends and high-performance communication systems.

Applications

• Low-noise amplifiers (LNAs)
• VHF/UHF receiver front-ends
• Satellite communication systems
• Wireless communication devices
• RF Signal Amplification

Features

• NPN Silicon Epitaxial Planar Transistor
• Ultra-low Noise Figure
• High Gain
• High Transition Frequency
• Excellent Linearity

Benefits

• Enhances signal reception by minimizing noise interference.
• Provides strong signal amplification for improved sensitivity.
• Suitable for high-frequency applications, ensuring optimal performance.
• Improves overall signal quality in communication systems.
• Reduces signal distortion, maintaining signal integrity.

Technical Specifications

The 2SC5089 features a collector-base voltage (VCBO) of 20V, a collector-emitter voltage (VCEO) of 12V, and an emitter-base voltage (VEBO) of 3V. The collector current (IC) is rated at 30mA, and the collector power dissipation (PC) is 200mW. The transition frequency (fT) is typically 6.5 GHz. Its noise figure is exceptionally low, typically around 1.0 dB at 1 GHz. The operating temperature range is -55°C to +150°C. It comes in a small surface-mount package for compact designs.