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2SC5319 TE85L

Part No 2SC5319 TE85L
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description Trans RF BJT NPN 5V 0.02A 4-Pin USQ T/R
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 157021-2SC5319 TE85L
Popularity Low
Supply and Demand Status Balance
Family Name 2SC5319
Introduction Date August 01, 1997
ECCN EAR99
Country of Origin Japan
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2SC5319 TE85L CAD Model

Description

Product Description

The 2SC5319 TE85L variant is a specifically packaged NPN transistor catering to applications demanding high reliability and low power operation. With a focus on reducing energy wastage, it ensures maximum performance in signal amplification and RF circuits. This transistor’s combination of compactness and efficiency makes it an ideal candidate for space-constrained designs without compromising on power delivery.

Features and Benefits

  • Energy Efficient: Designed to minimize power consumption while boosting performance.
  • Durable Package: Ensures robustness and longevity under various environmental conditions.
  • Optimized for RF Applications: Delivers efficient frequency response for radio frequency circuits.

Applications/Projects

  • RF Communication Devices
  • Energy-efficient Consumer Electronics
  • Battery-powered Equipment
  • Portable Signal Amplifiers

Additional Details

The 2SC5319 TE85L is designed with an emphasis on modern, power-conscious applications. By maintaining operational efficiency, this transistor supports engineers in building lasting and reliable electronics. It is particularly effective in placement-limited designs requiring high efficiency.

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