The 2SC5692(TE85L) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for high-frequency power amplification applications.

Applications

• RF power amplifiers
• Oscillator circuits
• Driver stages in communication equipment
• High-frequency switching circuits
• General purpose amplification

Features

• NPN Silicon Epitaxial Planar Transistor
• High power gain
• Low collector output capacitance
• High transition frequency
• Excellent linearity

Benefits

• Enables efficient power amplification at high frequencies.
• Reduces signal distortion due to its excellent linearity.
• Provides stable performance in various high-frequency circuits.
• Suitable for use in RF communication devices.

Additional Details

The 2SC5692(TE85L) features a collector-emitter voltage (VCEO) of 20V, a collector current (IC) of 1A, and a power dissipation (PC) of 2W. Its transition frequency (fT) is typically around 2.5 GHz, making it suitable for various high-frequency applications. The transistor is housed in a small surface-mount package (TE85L), facilitating easy integration into compact electronic devices. It offers excellent performance in applications requiring stable high-frequency power amplification, offering low distortion and high gain.