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Same model may have multiple batches, images only for reference.
2SD2257(CANO,A,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SD2257(CANO,A,Q)

Part No 2SD2257(CANO,A,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 3A 100V TO220-3
Datasheet
2SD2257(CANO,A,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 1.5V @ 1.5mA, 1.5A
Collector Cut-off Current(Max) 10μA (ICBO)
Typical Gain (hFE) (Min) 2000 @ 2A, 2V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220NIS
Win Source Part Number 1004598-2SD2257(CANO,A,Q)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SD2257(CANO,A,Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SD2257(CANO,A,Q) is an NPN transistor with a maximum collector-emitter breakdown voltage of 100V and a maximum current collector of 3A.

  • Typical Gain (hFE): 2000 @ 2A and 2V
  • Maximum Power Dissipation: 2W
  • Package: TO-220NIS
  • Mounting: Through-Hole
  • Operating Temperature: 150°C (TJ)

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